MOSIS PARAMETRIC TEST RESULTS RUN: N77E VENDOR: HP-NID TECHNOLOGY: SCN035H FEATURE SIZE: 0.4 microns INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: Hewlett Packard GMOS10Q. TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.60/0.4 Vth 0.67 -0.57 Volts SHORT 3.6/0.4 Vth 0.70 -0.61 Volts Vpt 10.0 -9.0 Volts Vbkd 9.5 -7.2 Volts Idss 520 -253 uA/um WIDE 10/0.4 Ids0 1.1 -0.3 pA/um LARGE 3.6/3.6 Vth 0.72 -0.67 Volts Vjbkd 9.4 -8.7 Volts Ijlk -7.5 1.8 pA Gamma 0.46 0.53 V^0.5 Delta length -0.06 0.07 microns (L_eff = L_drawn-DL) Delta width 0.25 0.17 microns (W_eff = W_drawn-DW) K' (Uo*Cox/2) 112.7 -24.8 uA/V^2 COMMENTS: Delta L varies with design technology as a result of the different mask biases applied for each technology. Please adjust the delta L in this report to reflect the actual design technology of your submission. Design Technology Delta L ----------------- ------- SCN4M_SUBM (lambda=0.2), HP_CMOS10QA no adjustment SCN4M (lambda=0.25) subtract 0.1 um FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >15.0 <-15.0 Volts PROCESS PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 N\PLY UNITS Sheet Resistance 2.9 2.7 2.5 0.06 0.06 0.06 1400 ohms/sq Width Variation -0.12 -0.09 0.07 0.04 -0.07 -0.11 microns (measured - drawn) Contact Resistance 2.5 2.4 2.2 0.86 0.70 ohms Gate Oxide Thickness 76 angstrom PROCESS PARAMETERS N_WELL MTL4 UNITS Sheet Resistance 1537 0.03 ohms/sq Width Variation 0.03 microns (measured - drawn) Contact Resistance 0.67 ohms COMMENTS: N\POLY is N-well under polysilicon. CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY METAL1 METAL2 METAL3 METAL4 N_WELL UNITS Area (substrate) 929 836 88 30 12 5 -- 88 aF/um^2 Area (N+active) 4533 47 19 13 11 aF/um^2 Area (P+active) 4555 aF/um^2 Area (poly) 69 19 10 7 aF/um^2 Area (metal1) 37 14 9 aF/um^2 Area (metal2) 39 15 aF/um^2 Area (metal3) 41 aF/um^2 Fringe (substrate) 174 179 37 27 26 40 aF/um Fringe (N+active) 453 aF/um Fringe (P+active) 612 aF/um Fringe (poly) 65 36 30 24 aF/um Fringe (metal1) 62 39 27 aF/um Fringe (metal2) 55 35 aF/um Fringe (metal3) 48 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 1.34 Volts Vinv 1.5 1.48 Volts Vol (100 uA) 2.0 0.21 Volts Voh (100 uA) 2.0 3.01 Volts Vinv 2.0 1.59 Volts Gain 2.0 -19.53 Ring Oscillator Freq. DIV4 (31-stage,3.3V) 211.08 MHz Ring Oscillator Power DIV4 (31-stage,3.3V) 5.34 uW/MHz/g COMMENTS: ================================================================ SPICE Model Parameters for Submicrometer Technologies Efforts to improve the accuracy of simulations in submicrometer technologies (HP CMOS26G and HP CMOS14TB) using BSIM1 models and Level=3 models have led us to the conclusion that no extraction strategy will provide sets of Level=3 or BSIM1 model parameters which will yield a set of SPICE model parameters which are as accurate as we desire for all transistor channel sizes. Continuing to devote resources to obtaining best fit sets of Level=3 and BSIM1 parameters will detract from our effort to move to BSIM3 v.3, which we believe will significantly improve the simulation accuracy of both digital and analog designs. In order to focus on the BSIM3 v.3 effort, we have suspended extraction of SPICE model parameters for submicrometer technologies (HP CMOS26G and HP CMOS14TB) for individual wafer lots. We will provide (upon request) Level=39 SPICE (binned HSPICE BSIM2) model parameters which are supplied by HP for CMOS26G, CMOS14TB, and CMOS10QA. The method of requesting these parameters is the same as that for requesting the HP process specifications, i.e., send a message to support@mosis.org and provide your commercial MOSIS account name, D-NAME and D-PASSWORD. We apologize for any inconvenience this change in SPICE model parameters policy may cause. However, the long term benefits of significantly improved accuracy of simulation with BSIM3 v.3 model parameters will hopefully be worth the short term inconvenience. Please address any comments, questions or suggestions to support@mosis.org. ================================================================ Download Text File