MOSIS PARAMETRIC TEST RESULTS
RUN: N7CU VENDOR: HP-NID
TECHNOLOGY: SCN035H FEATURE SIZE: 0.35 microns
INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: Hewlett Packard GMOS10QA.
TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS
MINIMUM 0.60/0.4
Vth 0.73 -0.66 Volts
SHORT 3.6/0.4
Vth 0.74 -0.68 Volts
Vpt 10.0 -8.8 Volts
Vbkd 9.4 -6.9 Volts
Idss 494 -252 uA/um
WIDE 10/0.4
Ids0 1.2 -0.4 pA/um
LARGE 3.6/3.6
Vth 0.74 -0.72 Volts
Vjbkd 9.3 -8.4 Volts
Ijlk -21.5 -4.6 pA
Gamma 0.48 0.55 V^0.5
Delta length -0.06 0.08 microns
(L_eff = L_drawn-DL)
Delta width 0.21 0.16 microns
(W_eff = W_drawn-DW)
K' (Uo*Cox/2) 108.8 -24.0 uA/V^2
COMMENTS: Delta L varies with design technology as a result of the different
mask biases applied for each technology. Please adjust the delta L
in this report to reflect the actual design technology of your
submission.
Design Technology Delta L
----------------- -------
SCN4M_SUBM (lambda=0.2),
HP_CMOS10QA no adjustment
SCN4M (lambda=0.25) subtract 0.1 um
FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >15.0 <-15.0 Volts
PROCESS PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 MTL4 UNITS
Sheet Resistance 3.1 2.8 2.6 0.06 0.06 0.06 0.03 ohms/sq
Width Variation -0.16 -0.12 -0.00 -0.02 -0.12 -0.16 0.04 microns
(measured - drawn)
Contact Resistance 2.8 2.7 2.4 0.90 0.69 0.90 ohms
Gate Oxide Thickness 76 angstrom
PROCESS PARAMETERS N\PLY N_WELL UNITS
Sheet Resistance 1422 1393 ohms/sq
Width Variation microns
(measured - drawn)
Contact Resistance ohms
COMMENTS: N\POLY is N-well under polysilicon.
CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 MTL4 N_WELL UNITS
Area (substrate) 934 857 88 32 14 7 5 92 aF/um^2
Area (N+active) 4550 49 20 13 11 aF/um^2
Area (P+active) 4558 aF/um^2
Area (poly) 78 19 11 7 aF/um^2
Area (metal1) 42 15 9 aF/um^2
Area (metal2) 40 15 aF/um^2
Area (metal3) 42 aF/um^2
Fringe (substrate) 177 166 40 19 18 25 aF/um
Fringe (N+active) 473 aF/um
Fringe (P+active) 508 aF/um
Fringe (poly) 70 42 31 25 aF/um
Fringe (metal1) 61 36 29 aF/um
Fringe (metal2) 57 37 aF/um
Fringe (metal3) 55 aF/um
CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 1.36 Volts
Vinv 1.5 1.50 Volts
Vol (100 uA) 2.0 0.22 Volts
Voh (100 uA) 2.0 3.00 Volts
Vinv 2.0 1.60 Volts
Gain 2.0 -20.82
Ring Oscillator Freq.
DIV4 (31-stage,3.3V) 206.35 MHz
Ring Oscillator Power
DIV4 (31-stage,3.3V) 5.49 uW/MHz/g
SPICE LEVEL2/LEVEL3 parameters not available.
N7CU SPICE BSIM3 VERSION 3.1 (HSPICE Level 49) PARAMETERS
* DATE: May 20/98
* LOT: N7CU WAF: 23
.MODEL CMOSN NMOS LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 7.6E-9
+XJ = 1.5E-7 NCH = 1.7E17 VTH0 = 0.5710859
+K1 = 0.878501 K2 = -0.0300243 K3 = 11.3113085
+K3B = -0.3965833 W0 = 1E-5 NLX = 1.457884E-7
+DVT0W = 0 DVT1W = 5.3E6 DVT2W = -0.032
+DVT0 = 7.4122244 DVT1 = 0.8466786 DVT2 = -0.0431829
+U0 = 392.1337916 UA = 2.772806E-10 UB = 1.277294E-18
+UC = 5.063058E-11 VSAT = 1.232875E5 A0 = 0.900086
+AGS = 0.2495782 B0 = 3.808501E-8 B1 = 1.022E-6
+KETA = -0.0935 A1 = 0 A2 = 1
+RDSW = 832.2247571 PRWG = -1.1278E-3 PRWB = -1.035E-3
+WR = 1 WINT = 1.074592E-7 LINT = 4.844866E-8
+DWG = -1.076457E-8 DWB = 5.072102E-9 VOFF = -0.15
+NFACTOR = 2 CIT = 0 CDSC = 2.4E-4
+CDSCD = 0 CDSCB = 0 ETA0 = 0.023341
+ETAB = 0 DSUB = 0.3151379 PCLM = 0.7954879
+PDIBLC1 = 2.0677E-3 PDIBLC2 = 1.499374E-3 PDIBLCB = 0
+DROUT = 0.0263371 PSCBE1 = 6.472592E9 PSCBE2 = 5.003116E-9
+PVAG = 0.1858763 DELTA = 0.01 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 CGDO = 4.7E-10
+CGSO = 4.7E-10 CGBO = 0 CJ = 9.3406E-4
+PB = 0.83492 MJ = 0.3779 CJSW = 2.0983E-10
+PBSW = 0.83492 MJSW = 0.39887 PVTH0 = -7.594092E-3
+PRDSW = -83.6700093 PK2 = -2.428668E-3 WKETA = -0.0203354
+LKETA = -0.015649
*
*
.MODEL CMOSP PMOS LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 7.6E-9
+XJ = 1.5E-7 NCH = 1.7E17 VTH0 = -0.6337919
+K1 = 0.9029167 K2 = -0.034687 K3 = 15.6544439
+K3B = -0.414614 W0 = 1E-5 NLX = 8.659181E-8
+DVT0W = 0 DVT1W = 5.3E6 DVT2W = -0.032
+DVT0 = 2.2415808 DVT1 = 0.4774944 DVT2 = -0.1499976
+U0 = 126.7415765 UA = 1.546932E-9 UB = 3.574984E-19
+UC = -9.25937E-11 VSAT = 1.400982E5 A0 = 0.9155035
+AGS = 0.2126518 B0 = 3.11251E-8 B1 = -5.650557E-7
+KETA = -0.13927 A1 = 0 A2 = 1
+RDSW = 1.833498E3 PRWG = -4.479053E-3 PRWB = -5E-3
+WR = 1 WINT = 1.06155E-7 LINT = 6.896986E-8
+DWG = -1.056462E-8 DWB = 2.438224E-9 VOFF = -0.15
+NFACTOR = 2 CIT = 0 CDSC = 6.593084E-4
+CDSCD = 0 CDSCB = 0 ETA0 = 0.0492433
+ETAB = 0 DSUB = 0.5 PCLM = 2.0919478
+PDIBLC1 = 2.247498E-3 PDIBLC2 = 1.238699E-3 PDIBLCB = 0
+DROUT = 0.0580951 PSCBE1 = 4.785273E9 PSCBE2 = 5.406486E-9
+PVAG = 1.8146291 DELTA = 0.01 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 CGDO = 4.5E-10
+CGSO = 4.5E-10 CGBO = 0 CJ = 8.6341E-4
+PB = 0.99 MJ = 0.56727 CJSW = 1.8343E-10
+PBSW = 0.99 MJSW = 0.36665 PVTH0 = 1.840766E-3
+PRDSW = -165.4749549 PK2 = -5.732675E-3 WKETA = -1.57284E-3
+LKETA = 5.75928E-3
*
*
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