MOSIS PARAMETRIC TEST RESULTS
RUN: N77E VENDOR: HP-NID
TECHNOLOGY: SCN035H FEATURE SIZE: 0.4 microns
INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: Hewlett Packard GMOS10Q.
TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS
MINIMUM 0.60/0.4
Vth 0.67 -0.57 Volts
SHORT 3.6/0.4
Vth 0.70 -0.61 Volts
Vpt 10.0 -9.0 Volts
Vbkd 9.5 -7.2 Volts
Idss 520 -253 uA/um
WIDE 10/0.4
Ids0 1.1 -0.3 pA/um
LARGE 3.6/3.6
Vth 0.72 -0.67 Volts
Vjbkd 9.4 -8.7 Volts
Ijlk -7.5 1.8 pA
Gamma 0.46 0.53 V^0.5
Delta length -0.06 0.07 microns
(L_eff = L_drawn-DL)
Delta width 0.25 0.17 microns
(W_eff = W_drawn-DW)
K' (Uo*Cox/2) 112.7 -24.8 uA/V^2
COMMENTS: Delta L varies with design technology as a result of the different
mask biases applied for each technology. Please adjust the delta L
in this report to reflect the actual design technology of your
submission.
Design Technology Delta L
----------------- -------
SCN4M_SUBM (lambda=0.2),
HP_CMOS10QA no adjustment
SCN4M (lambda=0.25) subtract 0.1 um
FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
Vth Poly >15.0 <-15.0 Volts
PROCESS PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 N\PLY UNITS
Sheet Resistance 2.9 2.7 2.5 0.06 0.06 0.06 1400 ohms/sq
Width Variation -0.12 -0.09 0.07 0.04 -0.07 -0.11 microns
(measured - drawn)
Contact Resistance 2.5 2.4 2.2 0.86 0.70 ohms
Gate Oxide Thickness 76 angstrom
PROCESS PARAMETERS N_WELL MTL4 UNITS
Sheet Resistance 1537 0.03 ohms/sq
Width Variation 0.03 microns
(measured - drawn)
Contact Resistance 0.67 ohms
COMMENTS: N\POLY is N-well under polysilicon.
CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY METAL1 METAL2 METAL3 METAL4 N_WELL UNITS
Area (substrate) 929 836 88 30 12 5 -- 88 aF/um^2
Area (N+active) 4533 47 19 13 11 aF/um^2
Area (P+active) 4555 aF/um^2
Area (poly) 69 19 10 7 aF/um^2
Area (metal1) 37 14 9 aF/um^2
Area (metal2) 39 15 aF/um^2
Area (metal3) 41 aF/um^2
Fringe (substrate) 174 179 37 27 26 40 aF/um
Fringe (N+active) 453 aF/um
Fringe (P+active) 612 aF/um
Fringe (poly) 65 36 30 24 aF/um
Fringe (metal1) 62 39 27 aF/um
Fringe (metal2) 55 35 aF/um
Fringe (metal3) 48 aF/um
CIRCUIT PARAMETERS UNITS
Inverters K
Vinv 1.0 1.34 Volts
Vinv 1.5 1.48 Volts
Vol (100 uA) 2.0 0.21 Volts
Voh (100 uA) 2.0 3.01 Volts
Vinv 2.0 1.59 Volts
Gain 2.0 -19.53
Ring Oscillator Freq.
DIV4 (31-stage,3.3V) 211.08 MHz
Ring Oscillator Power
DIV4 (31-stage,3.3V) 5.34 uW/MHz/g
COMMENTS:
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SPICE Model Parameters for Submicrometer Technologies
Efforts to improve the accuracy of simulations in submicrometer
technologies (HP CMOS26G and HP CMOS14TB) using BSIM1 models and
Level=3 models have led us to the conclusion that no extraction
strategy will provide sets of Level=3 or BSIM1 model parameters which
will yield a set of SPICE model parameters which are as accurate as we
desire for all transistor channel sizes. Continuing to devote
resources to obtaining best fit sets of Level=3 and BSIM1 parameters
will detract from our effort to move to BSIM3 v.3, which we believe
will significantly improve the simulation accuracy of both digital and
analog designs.
In order to focus on the BSIM3 v.3 effort, we have suspended
extraction of SPICE model parameters for submicrometer technologies
(HP CMOS26G and HP CMOS14TB) for individual wafer lots. We will
provide (upon request) Level=39 SPICE (binned HSPICE BSIM2) model
parameters which are supplied by HP for CMOS26G, CMOS14TB, and
CMOS10QA. The method of requesting these parameters is the same as
that for requesting the HP process specifications, i.e., send a
message to support@mosis.org and provide your commercial MOSIS account
name, D-NAME and D-PASSWORD.
We apologize for any inconvenience this change in SPICE model
parameters policy may cause. However, the long term benefits of
significantly improved accuracy of simulation with BSIM3 v.3 model
parameters will hopefully be worth the short term inconvenience.
Please address any comments, questions or suggestions to
support@mosis.org.
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